Clock generating circuit, semiconductor device including the same, and data processing system

ABSTRACT

A method for generating an internal clock signal by a clock generating circuit, including generating the internal clock signal based on an external clock signal, adjusting a phase of the internal clock signal by using a phase control value to synchronize with a phase of the external clock signal based on a phase difference between the external clock signal and the internal clock signal, switching operation modes including a first operation mode in which a phase of the internal clock signal is controlled at a predetermined cycle by updating the phase control value and a second operation mode in which a phase of the internal clock signal is fixed by fixing the phase control value, and the switching includes switching from the second operation mode to the first operation mode in response to a trigger signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a Continuation Application of U.S. patentapplication Ser. No. 12/805,652, filed on Aug. 11, 2010, which is basedon Japanese Patent Application No. 2009-208455 filed on Sep. 9, 2009,the entire contents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a clock generating circuit and asemiconductor device including the same, and more particularly relatesto a clock generating circuit that generates, similarly to a DLL (DelayLocked Loop) circuit, a phase-adjusted internal clock signal, and asemiconductor device including the same. The present invention alsorelates to a data processing system including such a semiconductordevice.

2. Description of Related Art

In recent years, a synchronous memory that performs operations insynchronization with a clock has been widely used for a main memory of apersonal computer or the like. Specifically, in a DDR (Double Data Rate)synchronous memory, because an input data and an output data need to besynchronized correctly with respect to an external clock signal, itbecomes necessary to provide a DLL circuit that generates an internalclock signal that is synchronized with the external clock signal (seeJapanese Patent Application Laid-open No. 2005-292947).

The DLL circuit includes a counter circuit in which a count value isupdated based on phases of each of the internal clock signal and theexternal clock signal, and a delay line that generates the internalclock signal by delaying the external clock signal based on the countvalue of the counter circuit. Updating of the count value is continuedeven after the DLL circuit is locked so as to follow the external clocksignal. That is, an updating operation of the count value is continuedeven after the internal clock signal has attained a predetermined phase(generally, zero phase) with respect to the phase of the external clocksignal. Thus, certain power is continuously consumed even after the DLLcircuit is locked.

A semiconductor device that stops power supply to a DLL circuit during arefresh operation is described in Japanese Patent Application Laid-openNo. 2004-273106. An internal clock signal that is an output of a DLLcircuit is not used any way during the refresh operation. Therefore,when the power supply to the DLL circuit is stopped during the refreshoperation, power consumption at least during the refresh operation canbe reduced.

However, when the power supply to the DLL circuit is stopped, the countvalue of a counter circuit is disadvantageously reset. Therefore, theDLL circuit cannot be accessed until the DLL circuit is relocked afterthe power supply to the DLL circuit is restarted, and this leads to adecrease in the performance of the semiconductor device.

Because the operation of the DLL circuit is continued until a refreshcommand is issued, the power consumption by the DLL circuit cannot bereduced during this period.

Such problems occur not only in DLL circuits but it also commonly occursin clock generating circuits that generate a phase-controlled internalclock signal.

SUMMARY

In one embodiment, there is provided a clock generating circuitcomprising: a clock generating unit that generates a first clock signalbased on an external clock signal; a phase-controlling unit thatcontrols the clock generating unit by using a phase control value so asto adjust a phase of the first clock signal to synchronize with a phaseof the external clock signal; and a mode switching circuit that switchesan operation mode of the phase-controlling unit, wherein thephase-controlling unit has a first operation mode in which a phase ofthe first clock signal is controlled at a predetermined cycle byupdating the phase control value and a second operation mode in which aphase of the first clock signal is fixed by fixing the phase controlvalue, the mode switching circuit changes the phase-controlling unitfrom the second operation mode to the first operation mode in responseto a trigger signal, and changes the phase-controlling unit from thefirst operation mode to the second operation mode in response to a statewhere the first clock signal attains a predetermined phase, and when themode switching circuit changes the phase-controlling unit from thesecond operation mode to the first operation mode, the phase-controllingunit uses the phase control value that is fixed in the second operationmode as an initial value.

According to the present invention, when a first clock signal that is anoutput of a clock generating unit attains a predetermined phase, thephase of the first clock signal is fixed, and therefore powerconsumption during a phase control operation can be reduced. Further,because the phase control operation is restarted in response to atrigger signal, the phase of the internal clock signal is not likely tosignificantly deviate from a desired phase.

BRIEF DESCRIPTION OF THE DRAWINGS

The above features and advantages of the present invention will be moreapparent from the following description of certain preferred embodimentstaken in conjunction with the accompanying drawings, in which:

FIG. 1 is a block diagram of an overall configuration of a semiconductordevice 10 according to a preferred embodiment of the present invention;

FIG. 2 is a block diagram of the DLL circuit 100 according to a firstembodiment of the present invention;

FIG. 3 is a circuit diagram of the mode switching circuit (the ditherdetermining circuit) 130;

FIG. 4 is a timing chart for explaining operations of the mode switchingcircuit 130;

FIG. 5 is a block diagram of the DLL circuit 200 according to the secondembodiment;

FIG. 6 is a circuit diagram of the mode switching circuit 230;

FIG. 7 is a timing chart for explaining operations of the mode switchingcircuit 230;

FIG. 8 is a block diagram of a configuration of a semiconductor device10 a according to the third embodiment;

FIG. 9 is a circuit diagram of the voltage variation detecting circuit300;

FIG. 10 is a block diagram of a semiconductor device 10 b according tothe fourth embodiment;

FIG. 11 is a block diagram of a semiconductor device 10 b according to amodification; and

FIG. 12 is a block diagram of a data processing system 500 that includesthe semiconductor device 10.

DETAILED DESCRIPTION OF THE EMBODIMENTS

A representative example of a technical concept for solving the problemof the present invention is described below. It is needless to mentionthat the contents that the present application is to claim for patentare not limited to the following technical concept, but to thedescription of the appended claims. That is, the technical concept ofthe present invention is to reduce power consumption by stopping a phasecontrol operation of a clock signal instead of stopping generation ofthe clock signal when the generated clock signal attains a predeterminedphase, and restarting the phase control operation in response to atrigger signal. That is, one of the features of the present invention isto achieve reduction in power consumption by intermittently performingthe phase control operation. A DLL circuit performs the phase controloperation when power is supplied to a semiconductor device or a resetcommand of the DLL circuit is input, and it stops the phase controloperation when the phase control operation is completed (a state where aphase of an external clock signal matches with a phase of an internalclock signal). Thereafter, the DLL circuit restarts the phase controloperation in response to the trigger signal and automatically stops thephase control operation in association with a predetermined result ofthe phase control operation. That is, shifting is performed from asecond operation mode where the phase control operation is inactive to afirst operation mode where the phase control operation is active inresponse to the trigger signal and thereafter shifting is performedautomatically to the second operation mode. The trigger signal acts in adifferent way than the reset command. When shifting from the secondoperation mode to the first operation mode, the phase control operationis performed while retaining a previous phase control value of thesecond operation mode. The phase control value is modified (updated) orretained (not updated) in the phase control operation. On the otherhand, the reset command causes the DLL circuit itself to be reset (thatis, the phase control value is discarded) and causes re-generation ofanew phase control value.

Preferred embodiments of the present invention are described below indetail with reference to the accompanying drawings.

FIG. 1 is a block diagram of an overall configuration of a semiconductordevice 10 according to an embodiment of the present invention.

The semiconductor device 10 according to the present embodiment is a DDRSDRAM. The semiconductor device 10 includes, as external terminals,clock terminals 11 a and 11 b, command terminals 12 a to 12 e, addressterminals 13, and a data input and output terminal 14. While thesemiconductor device 10 also includes a power terminal and a data strobeterminal, these terminals are not shown in FIG. 1.

The clock terminals 11 a and 11 b are terminals to which external clocksignals CK and /CK are supplied, respectively. These external clocksignals CK and /CK are then supplied to a clock input circuit 21. In thepresent specification, a signal with a / (slash) at the beginning of thesignal name means that the signal is an inverse signal, or a low-activesignal, of a corresponding signal. Thus, the external clock signals CKand /CK are complementary to each other. The clock input circuit 21generates a single-phase internal clock signal ICLK based on theexternal clock signals CK and /CK, and supplies it to a DLL circuit 100(200).

The DLL circuit 100 (200) receives the internal clock signal ICLK andgenerates, with respect to the external clock signals CK and /CK, aphase-controlled internal clock signal LCLK. The DLL circuit 100 (200)supplies the generated internal clock signal LCLK to a data input andoutput circuit 70. As shown in FIG. 1, the DLL circuit 100 (200)includes a delay line (a clock generating unit) 110, a phase controlunit 120, and a mode switching circuit 130. The DLL circuit 100 (200) isdescribed in detail later.

The command terminals 12 a to 12 e are terminals to which a row addressstrobe signal /RAS, a column address strobe signal /CAS, a write enablesignal /WE, a chip selection signal /CS, and an on-die terminationsignal ODT are supplied, respectively. These command signals CMD aresupplied to a command input circuit 31. From the command input circuit31, these command signals CMD are supplied to a command decoder 32. Thecommand decoder 32 is a circuit that generates various internal commandsICMD by performing retaining, decoding, counting and the like of thecommand signals. The generated internal commands ICMD are supplied toeach of a row system control circuit 51, a column system control circuit52, a mode register 53, the data input and output circuit 70, and theDLL circuit 100 (200). As shown in FIG. 1, among the internal commandsICMD, a refresh signal REFB is supplied at least to the row systemcontrol circuit 51 and the DLL circuit 100 (200).

The address terminals 13 are terminals to which an address signal ADD issupplied. The address signal ADD is then supplied to an address inputcircuit 41. An output of the address input circuit 41 is supplied to anaddress latching circuit 42. Of the address signal ADD that is latchedin the address latching circuit 42, a row address part is supplied tothe row system control circuit 51 and a column address part is suppliedto the column system control circuit 52. Furthermore, when there is anentry in a mode register set, the address signal ADD is supplied to themode register 53. With this, the contents of the mode register 53 areupdated.

The row system control circuit 51 is a circuit that supplies the rowaddress to a row decoder 61. The row address is supplied to the rowsystem control circuit 51 by the address latching circuit 42. The rowsystem control circuit 51 includes a refresh counter 51 a. When therefresh signal REFB is activated, a refresh address that is a countvalue of the refresh counter 51 a is supplied to the row decoder 61. Therow decoder 61 is a circuit that selects one word line from among theword lines WL of a memory cell array 60. A plurality of the word linesWL and a plurality of bit lines BL are arranged inside the memory cellarray 60 in an intersecting manner. Memory cells MC are arranged at thenodes of the word lines WL and the bit lines BL (only one word line WL,bit line BL, and memory cell MC are shown in FIG. 1). A refreshoperation (re-updating of memory cell information) is required formaintaining data stored in the memory cells MC. Each bit line BL isconnected to a corresponding one of sensing amplifiers SA in a sensingcircuit 63.

An output of the column system control circuit 52 is supplied to acolumn decoder 62. The column decoder 62 is a circuit that selects onesensing amplifier from among the sensing amplifiers SA included in thesensing circuit 63. The sensing amplifier SA selected by the columndecoder 62 is connected to a data amplifier 64 via a main I/O line MIO.The data amplifier 64 further amplifies read data that is alreadyamplified by the sensing amplifier SA during a reading operation, andsupplies the amplified read data to the data input and output circuit 70via a read/write bus RWBS. On the other hand, the data amplifier 64amplifies write data supplied from the data input and output circuit 70via the read/write bus RWBS during a writing operation, and supplies theamplified write data to the sensing amplifier SA.

The data input and output terminal 14 is a terminal that outputs theread data DQ and inputs the write data DQ, and it is connected to thedata input and output circuit 70. The data input and output circuit 70includes an output buffer 71. The read data DQ is output from the outputbuffer 71 in synchronization with the internal clock signal LCLK duringthe read operation. In FIG. 1, only one data input and output terminal14 is shown. However, it is not necessary that the data input and outputterminal 14 be only one. A plurality of data input and output terminalscan be provided.

The overall configuration of the semiconductor device 10 is as describedabove. The DLL circuit 100 is explained next in detail.

FIG. 2 is a block diagram of the DLL circuit 100 according to a firstembodiment of the present invention.

As shown in FIG. 2, the DLL circuit 100 includes the delay line (theclock generating unit) 110, the phase control unit 120, and the modeswitching circuit 130.

The delay line 110 is a circuit that generates an internal clock signalLCLK for output by delaying the internal clock signal ICLK. The phasecontrol unit 120 adjusts an amount of delay of the delay line 110.Although the configuration thereof is not particularly limited, thedelay line 110 preferably includes a coarse delay line that delays theinternal clock signal ICLK at a relatively coarse adjustment pitch, anda fine delay line that delays the internal clock signal ICLK at arelatively fine adjustment pitch.

The phase control unit 120 is a circuit block that receives the internalclock signal ICLK and the internal clock signal LCLK for output. Byadjusting the amount of delay of the delay line 110 based on thesereceived signals, the phase control unit 120 adjusts a phase of theinternal clock signal LCLK. As shown in FIG. 2, the phase control unit120 includes a replica circuit 121, a phase determining circuit 122, acounter control circuit 123, a counter circuit 124, and afrequency-dividing circuit 125.

The replica circuit 121 has a configuration that is substantially thesame as that of the output buffer 71 shown in FIG. 1. The replicacircuit 121 outputs a feedback clock signal fbCLK in synchronizationwith the internal clock signal LCLK. Thus, a phase of the feedback clocksignal fbCLK exactly matches with a phase of the output signal (readdata) DQ. However, the size of a transistor that forms the replicacircuit 121 does not need to be the same as the size of a transistorthat forms the output buffer 71. As long their impedances aresubstantially the same, a shrunk transistor can also be used.

The feedback clock signal fbCLK and the internal clock signal ICLK aresupplied to the phase determining circuit 122. The phase determiningcircuit 122 is a circuit that detects a difference between a phase ofthe internal clock signal ICLK and a phase of the feedback clock signalfbCLK. As described above, the delay line 110 adjusts the phase of thefeedback clock signal fbCLK so that the phase coincides with a phase ofthe read data DQ. However, both the phases change from moment to momentdue to a variation of parameters such as a voltage and a temperatureaffecting the delay amount of the delay line 110, and based on avariation of frequencies of the external clock signals CK and /CKitself. The phase determining circuit 122 detects the change in thephases, and determines whether the phase of the feedback clock signalfbCLK is advanced or delayed with respect to the internal clock signalICLK. The phase determining circuit 122 performs the determination ateach cycle of the internal clock signal ICLK, and supplies adetermination result to the counter control circuit 123 as a phasedetermination signal PD.

The counter control circuit 123 is a circuit that generates an up anddown signal U/D (hereinafter, “up/down signal U/D”) based on the phasedetermination signal PD, and updates the up/down signal U/D insynchronization with a sampling clock signal SYNCLK1. Thefrequency-dividing circuit 125 generates the sampling clock signalSYNCLK1. The frequency-dividing circuit 125 is a circuit thatfrequency-divides the internal clock signal ICLK and generates thesampling clock signals SYNCLK1 and SYNCLK2 having lower frequencies.Although it is not particularly limited, the number of divisions can beset to 16 or 32. For example, when the frequency-dividing circuit 125divides the internal clock signal ICLK into 16 divisions, it means thatthe sampling clock signals SYNCLK1 and SYNCLK2 are activated after every16 cycles of the internal clock signal ICLK. In this case, a samplingcycle becomes a 16-clock cycle.

The up/down signal U/D generated by the counter control circuit 123 issupplied to the counter circuit 124. The counter circuit 124 is acircuit that performs upcounting or downcounting based on the up/downsignal U/D. The counter circuit 124 upcounts or downcounts insynchronization with the sampling clock signal SYNCLK2 whose phase isdelayed with respect to the sampling clock signal SYNCLK1. A count valueCOUNT of the counter circuit 124 is supplied to the delay line 110. Thedelay amount of the delay line 110 is determined based on the countvalue COUNT.

The phase control unit 120 that has a configuration mentioned above hasthe first operation mode that changes the delay amount of the delay line110 in synchronization with the sampling clock signal SYNCLK2 and thesecond operation mode that fixes the delay amount of the delay line 110.That is, the phase control operation of the internal clock signal LCLKis performed in the first operation mode and the phase of the internalclock signal LCLK is fixed in the second operation mode.

When the phase control unit 120 shifts to the second operation mode, theoperations of the replica circuit 121, the phase determining circuit122, the counter control circuit 123, the counter circuit 124, and thefrequency-dividing circuit 125 are stopped. Thus, only an insignificantamount of power is consumed by the phase control unit 120 in the secondoperation mode. However, the count value of the counter circuit 124 isnot reset even if the phase control unit 120 is shifted to the secondoperation mode. The count value that is available at the time ofshifting to the second operation mode is retained. That is, a delayamount immediately before shifting to the second operation mode is fixedas the delay amount of the delay line 110. Thus, the power supply atleast to the counter circuit 124 cannot be cut off. With respect to thereplica circuit 121, the phase determining circuit 122, the countercontrol circuit 123, and the frequency-dividing circuit 125, the powersupply can be cut off when the phase control unit 120 is shifted to thesecond operation mode. However, to shift (return) the phase control unit120 to the first operation mode rapidly, instead of cutting off thepower supply, it is preferable to prepare a state in which the switchingis not performed when there is a change in the input signals, that is,the input signals are logically fixed.

An operation mode of the phase control unit 120 is selected according toa stop signal STOP that is supplied from the mode switching circuit 130.Specifically, when a state of the stop signal STOP is inactive (a lowlevel), the operation mode of the phase control unit 120 is set to thefirst operation mode, and when the state of the stop signal STOP isactive (a high level), the operation mode is set to the second operationmode.

As shown in FIG. 2, the up/down signal U/D that is an output of thecounter control circuit 123, and the refresh signal REFB that is anoutput of the command decoder 32 are supplied to the mode switchingcircuit 130. Based on these signals, the mode switching circuit 130generates the stop signal STOP. As explained in detail below, in thefirst embodiment, the mode switching circuit 130 is formed of a ditherdetermining circuit. The dither determining circuit is a circuit thatdetects a DLL lock by monitoring a change-pattern of the up/down signalU/D. The DLL lock is a state indicating that the phase of the internalclock signal ICLK substantially matches with the phase of the feedbackclock signal fbCLK.

FIG. 3 is a circuit diagram of the mode switching circuit (the ditherdetermining circuit) 130 and FIG. 4 is a timing chart for explainingoperations of the mode switching circuit (the dither determiningcircuit) 130.

As shown in FIG. 3, the mode switching circuit 130 according to thefirst embodiment includes latch circuits 131 and 132 that latch therefresh signal REFB, an AND gate 133 that receives outputs DT0 and DT1of the latch circuits 131 and 132, and a one-shot pulse generatingcircuit 134 that generates a one-shot pulse OP based on the refreshsignal REFB.

The refresh signal REFB, which is a low-active signal, is normally (whenthe semiconductor device is at a state in which a command is not issuedfrom outside to refresh cell information) locked to a high level. Whenthe refresh command is issued from outside, the command decoder 32changes the refresh signal REFB to a low level for a predetermined time.When the row system control circuit 51 completes the refresh operation,the refresh signal REFB returns to a high level. An auto refresh commandis an example of the refresh command issued from outside to thesemiconductor device. After the refresh operation is completed by therow system control circuit 51, the phase control operation of the DLLcircuit 100 is performed by the one-shot pulse generating circuit 134.The one-shot pulse generating circuit 134 is described later. Anoperation noise in a chip (a semiconductor device) due to the row systemcontrol circuit 51 does not affect the accuracy of the phase controloperation.

When the refresh signal REFB becomes inactive, that is, when the refreshsignal REFB is changed from a low level to a high level, the one-shotpulse generating circuit 134 generates the one-shot pulse OP as shown inFIG. 4. Once the one-shot pulse OP is generated, the latch circuits 131and 132 are reset and their outputs DT0 and DT1 change to low levels.Thus, the stop signal STOP, which is an output of the AND gate 133, willalways be at a low level immediately after the refresh operation iscompleted. As described above, when the stop signal STOP is at a lowlevel, the first operation mode is selected for the phase control unit120. That is, the phase control operation of the internal clock signalLCLK, which is synchronized with the sampling clock signal SYNCLK2, isperformed.

The up/down signal U/D is supplied to a clock input terminal of thelatch circuit 131 and an inverted up/down signal U/D is supplied to aclock input terminal of the latch circuit 132. Thus, when the up/downsignal U/D is changed once, a high level is latched in any one of thelatch circuits 131 and 132, and when the up/down signal U/D changes onceagain, a high level is latched in a different one of the latch circuits131 and 132. That is, when the up/down signal U/D changes two times(that is, when detecting the DLL lock indicating the state that thephase has substantially reached zero by a phase adjustment operation inthe dither determination), the outputs DT0 and DT1 of both the latchcircuits 131 and 132 change to a high level. As a result, the stopsignal STOP that is the output of the AND gate 133 changes to a highlevel. When the stop signal STOP changes to a high level, the secondoperation mode is selected for the phase control unit 120. That is, thephase of the internal clock signal LCLK is fixed. A process mentionedabove is a dither process of the dither determining circuit. The up/downsignal U/D can also be taken as a dither signal.

The up/down signal U/D can change two times in the following twopatterns. One, the up/down signal U/D changes in the order of updetermination, down determination, and up determination (U/D/U). Second,the up/down signal U/D changes in the order of down determination, updetermination, and down determination (D/U/D). Any one of these patternscan appear when the phase of the external clock signal CK substantiallymatches with the phase of the feedback clock signal fbCLK, that is, whenthe DLL circuit is locked.

Thus, as shown in FIG. 4, the phase control unit 120 is shifted from thefirst operation mode to the second operation mode each time the DLL lockis detected in the dither determination. Furthermore, the phase controlunit 120 is shifted from the second operation mode to the firstoperation mode each time the refresh signal REFB is activated. That is,the power consumption of the phase control unit 120 is reduced becauseof intermittently performing the phase control operation according tothe trigger signal (the refresh signal REFB).

When the phase control unit 120 is shifted to the second operation mode,the phase control operation is stopped. Therefore, there is apossibility that the internal clock signal LCLK does not correctlyfollow the external clock signals CK and /CK. However, according to thefirst embodiment, the refresh signal REFB that activates atpredetermined intervals is used as the trigger signal to return thephase control unit 120 to the first operation mode. Therefore, shiftingof the phase due to stoppage of the phase control operation almost doesnot take place. Specifically, because the issue frequency of the autorefresh command is of the order of microseconds, noticeable shifting ofthe phase exceptionally occurs within such a short period. As a result,the output quality of the read data is not deteriorated byintermittently stopping the phase control operation. On the other hand,during the period in which the phase control operation is stopped, ajitter is not generated in the internal clock signal LCLK. Therefore,there is a possibility of improvement in the output quality of the readdata.

According to the first embodiment, by focusing on a point that the autorefresh command is activated at the predetermined intervals, the autorefresh command is used as the trigger signal for shifting the phasecontrol unit 120 from the second operation mode to the first operationmode. Therefore, any dedicated circuit for shifting the phase controlunit 120 to the first operation mode does not need to be added.

A second embodiment of the present invention is explained next.

FIG. 5 is a block diagram of the DLL circuit 200 according to the secondembodiment.

The DLL circuit 200 according to the second embodiment differs from theDLL circuit 100 according to the first embodiment in the followingaspects. That is, in the second embodiment, the phase control unit 120and the mode switching circuit 130, respectively, are replaced by aphase control unit 220 and a mode switching circuit 230. Furthermore,the phase control unit 220 differs from the phase control unit 120 shownin FIG. 2, in that it includes a frequency-dividing circuit 225 insteadof the frequency-dividing circuit 125. The DLL circuit 200 is identicalto the DLL circuit 100 in all other respects. Therefore, like referencenumerals are denoted to like elements and redundant explanations thereofwill be omitted.

In addition to the sampling clock signals SYNCLK1 and SYNCLK2, thefrequency-dividing circuit 225 generates a set signal SET and a resetsignal RST. The set signal SET has the same cycle as that of thesampling clock signals SYNCLK1 and SYNCLK2. Therefore, one of thesampling clock signals SYNCLK1 and SYNCLK2 can be used as the set signalSET. The reset signal RST has a longer cycle than the sampling clocksignals SYNCLK1 and SYNCLK2. It is preferable to set the cycle of thereset signal RST about four times the cycle of the sampling clocksignals SYNCLK1 and SYNCLK2. When the cycle of the sampling clocksignals SYNCLK1 and SYNCLK2 is 16 times the cycle of the internal clocksignal ICLK, the cycle of the reset signal RST becomes 64 times thecycle of the internal clock signal ICLK.

The set signal SET and the reset signal RST are supplied to the modeswitching circuit 230. As shown in FIG. 5, the mode switching circuit230 includes a dither determining circuit 240 and a continuitydetermining circuit 250.

FIG. 6 is a circuit diagram of the mode switching circuit 230 and FIG. 7is a timing chart for explaining operations of the mode switchingcircuit 230.

As shown in FIG. 6, the continuity determining circuit 250 includes SRlatch circuits 260 and 270, and an AND gate 280. The AND gate 280receives determination signals CN0 and CN1 that are outputs of the SRlatch circuits 260 and 270.

The SR latch circuit 260 has a configuration in which NAND gates 261 and262 are connected in a cyclic manner. A set input terminal (S) isarranged on the NAND gate 261 side and a reset input terminal (R) isarranged on the NAND gate 262 side. The phase determination signal PD issupplied to the set input terminal (S) and the set signal SET that isinverted by an inverter 281 is supplied to the reset input terminal (R).

Similarly, the SR latch circuit 270 has a configuration in which NANDgates 271 and 272 are connected in a cyclic manner. A set input terminal(S) is arranged on the NAND gate 271 side and a reset input terminal (R)is arranged on the NAND gate 272 side. The phase determination signal PDthat is inverted by an inverter 282 is supplied to the set inputterminal (S) and the set signal SET that is inverted by the inverter 281is supplied to the reset input terminal (R).

With such a configuration, when the set signal SET is activated, one ofthe determination signals CN0 and CN1 changes to a high level, and theother one of these signals changes to a low level. Which one of thedetermination signals CN0 and CN1 changes to a high level depends on thelogic level of the phase determination signal PD at the time point atwhich the set signal SET is activated. Due to this, a determinationsignal CN02 changes to a low level by necessity after the set signal SETis activated. The determination signal CN02 remains at a low level whenthe logic level of the phase determination signal PD does not change.However, when the logic level of the phase determination signal PD ischanged before the set signal SET is activated next time, thedetermination signal CN02 changes to a high level. The determinationsignal CN02 is supplied to a latch circuit 283 and it is output as adetermination signal CN2 in synchronization with the set signal SET.That is, the continuity determining circuit 250 determines whether thelogic level of the phase determination signal PD changes during theactivation cycle of the set signal SET. In the timing chart shown inFIG. 7, the phase determination signal PD changes in the entirecontinuous update cycles CYC1 to CYC4 that are regulated by the setsignal SET. Therefore, the determination signal CN2 is retained at ahigh level.

As shown in FIG. 6, the continuity determining circuit 250 furtherincludes an SR latch circuit 290. The SR latch circuit 290 has aconfiguration in which NAND gates 291 and 292 are connected in a cyclicmanner. A set input terminal (S) is arranged on the NAND gate 291 sideand a reset input terminal (R) is arranged on the NAND gate 292 side.The determination signal CN2 is supplied to the set input terminal (S)and the reset signal RST that is inverted by an inverter 284 is suppliedto the reset input terminal (R). A determination signal CNS01 that is anoutput of the SR latch circuit 290 is supplied to a latch circuit 285and it is then output as a determination signal CNS1 in synchronizationwith the reset signal RST. The determination signal CNS1 is inverted byan inverter 286 and it is then output as a high-active determinationsignal CNS2.

With such a configuration, when the reset signal RST is activated, thedetermination signal CNS01 that is the output of the SR latch circuit290 changes to a low level. However, when the determining circuit CN2changes to a low level at least once before the reset signal RST isactivated next time, the determination signal CNS01 changes to a highlevel. As described above, when the determination signal CN2 changes toa low level, it represents a state where the logic level of the phasedetermination signal PD has not changed during the update cycle. On theother hand, according to an example shown in FIG. 7, when thedetermination signal CN2 is always maintained at a high level until thereset signal RST is activated next time, the determination signal CNS01is maintained at a low level because the SR latch circuit 290 is notset. As described above, when the determination signal CN2 changes to ahigh level, it represents a state where the logic level of the phasedetermination signal PD has changed during the update cycle.

The determination signal CNS01 that is the output of the SR latchcircuit 290 is latched in the latch circuit 285 in synchronization withthe reset signal RST and it is then output as the determination signalCNS2 via the inverter 286. Thus, when a phenomenon in which the logiclevel of the phase determination signal PD does not change in the updatecycle that is one cycle of the set signal SET appears at least once inone cycle of the reset signal RST, the determination signal CNS2 changesto a low level (an inactive level). On the other hand, when a phenomenonin which the logic level of the phase determination signal PD changesduring the update cycle appears in all of the update cycles included inone cycle of the reset signal RST, the determination signal CNS2 changesto a high level (an active level).

The determination signal CNS2 that is obtained as mentioned above issupplied to one input terminal of an OR gate 231. A determination signalDTS1 that is an output of the dither determining circuit 240 is suppliedto the other input terminal of the OR gate 231.

The dither determining circuit 240 has a circuit configuration that isthe same as that of the mode switching circuit 130 shown in FIG. 3.Thus, when the DLL lock is detected in the dither determination, thedetermination signal DTS1 that is the output of the dither determiningcircuit 240 is activated to a high level. The operations of the ditherdetermining circuit 240 are explained above in connection with the modeswitching circuit 130.

In the second embodiment of the present invention, the output of the ORgate 231 is used as the stop signal STOP. Thus, when at least one of theoutputs of the dither determining circuit 240 (DTS1) and the continuitydetermining circuit 250 (CNS2) is activated, the stop signal STOPchanges to a high level.

Thus, in the second embodiment, the phase control unit 220 is shifted tothe second operation mode not only when the DLL lock is detected by thedither determination as in the first embodiment, but also when aphenomenon in which the phase determination signal PD changes in onecycle of the set signal SET occurs continuously for multiple times. Thatis, when the trigger signal (the refresh signal REFB) is activated, thephase control operation shifts from the second operation mode to thefirst operation mode and the phase detection process is begun. Duringthis process, the phases of the internal clock signal ICLK and thefeedback clock signal fbCLK are possible to be almost the same. In thesecond embodiment, a DLL lock is also detected in such a case because anon-continuity determination that shows a stable status in which theup/down signal U/D is not changed is made. The phase control unit 220according to second embodiment is shifted to the second operation modein response to the DLL lock detected even in this manner. As describedabove, a pattern in which the phase determination signal PD changes inthe middle of all the successive update cycles is one of the patternsthat appears when the DLL is locked. This pattern sometimes appearsbefore the pattern that is detected in the dither determination. Thus,when the dither determination is combined with the non-continuitydetermination according to the second embodiment, the DLL circuit lockcan be detected promptly. As a result, power consumption can be furtherreduced.

A third embodiment of the present invention is explained next.

FIG. 8 is a block diagram of a configuration of a semiconductor device10 a according to the third embodiment.

The semiconductor device 10 a according to the third embodiment differsfrom the semiconductor device 10 shown in FIG. 1, in that it includes avoltage variation detecting circuit 300 and an AND gate 301. Thesemiconductor device 10 a is identical to the semiconductor device 10shown in FIG. 1 in all other aspects. Therefore, like reference numeralsare denoted to like elements and redundant explanations thereof will beomitted.

The voltage variation detecting circuit 300 is a circuit that causes adetection signal J3 to activate when it detects variation in powersupply voltage. The generated detection signal J3 and the refresh signalREFS are input into the AND gate 301. In the third embodiment, an outputof the AND gate 301 is used as the stop signal STOP, and it is suppliedto the DLL circuit 100 or 200.

FIG. 9 is a circuit diagram of the voltage variation detecting circuit300.

As shown in FIG. 9, the voltage variation detecting circuit 300 includesa plurality of resistors R1 to R3, comparators 311 and 312, and an ANDgate 320. An inverting input node (+) of the comparator 311 is connectedto a node N1U of the resistors R1 and R2 connected in series between theterminals of the power source. Furthermore, a non-inverting input node(−) of the comparator 312 is connected to a node N1L of the resistors R2and R1 connected in series between the terminals of the power source.The non-inverting input node (−) of the comparator 311 and the invertinginput node (+) of the comparator 312 are connected to a node N1 of thetwo resistors R3 connected in series between the terminals of the powersource.

Resistance values of the resistors R1 to R3 are set such that R2>R1>>R3.Due to this, the voltage of the node N1 becomes half of power supplyvoltage VDD (=VDD/2), the voltage of the node N1U becomes greater thanhalf of the power supply voltage VDD (>VDD/2), and the voltage of thenode N1L becomes less than half of the power supply voltage VDD(<VDD/2). For example, when the power supply voltage VDD is 1.2 V, N1,N1U, and N1L, respectively, are set to 0.6 V, 0.7 V, and 0.5 V. As aresult, detection signals J1 and J2 that are outputs of the comparators311 and 312 change to a high level, and the detection signal J3 alsochanges to a high level (an non-active level).

When the power supply voltage VDD varies rapidly, the voltages of thenodes N1, N1U, and N1L also vary. However, as described above, becausethe resistance values of the resistors R1 and R2 are substantiallygreater than the resistance values of the resistors R3, voltages varyslowly at the nodes N1U and N1L as compared to that at the node N1.Thus, when the power supply voltage VDD varies at an acceleration equalto or higher than a predetermined acceleration, one of the detectionsignals J1 and J2 is inverted to a low level and the detection signal J3is activated to a low level. Based on this principle, the voltagevariation detecting circuit 300 can detect rapid variations in the powersupply voltage VDD.

As shown in FIG. 8, the detection signal J3 that is an output of thevoltage variation detecting circuit 300 is input into the AND gate 301.Thus, in the third embodiment, the operation mode of the DLL circuit 100or 200 is set to the first operation mode and the phase controloperation is restarted not only when the refresh signal REFB isactivated but also when the detection signal J3 is activated.

In the third embodiment, the phase control unit 120 is caused to shiftfrom the second operation mode to the first operation mode in responseto the detected variation in the power supply voltage VDD. Thus, phaseshifting of the internal clock signal LCLK that occurs due to variationsin the power supply voltage VDD can be prevented.

A fourth embodiment of the present invention is explained next.

FIG. 10 is a block diagram of a semiconductor device 10 b according tothe fourth embodiment.

The semiconductor device 10 b according to the fourth embodiment differsfrom the semiconductor device 10 a shown in FIG. 8, in that it includesa timer circuit 400 and an AND gate 401. The semiconductor device 10 bis identical to the semiconductor device 10 a shown in FIG. 8 in allother aspects. Therefore, like reference numerals are denoted to likeelements and redundant explanations thereof will be omitted.

The timer circuit 400 is a circuit that activates a timer signal OSC ata predetermined cycle. The timer circuit 400 operates asynchronouslywith respect to outside of the semiconductor device 10 b. The timersignal OSC is a signal that is used instead of the refresh signal REFB,and it is input into the AND gate 401 along with the detection signalJ3. In the fourth embodiment, an output of the AND gate 401 is used asthe stop signal STOP, and the STOP signal is supplied to the DLL circuit100 or 200.

In the fourth embodiment, the timer signal OSC is used instead of therefresh signal REFB. Therefore, the phase control unit 120 can beshifted from the second operation mode to the first operation mode at apredetermined cycle. Due to this, a state that the phase control unit120 does not shift to the second operation mode for a long time becausethe auto refresh command is continuously issued, or a state that thephase control unit 120 does not shift to the first operation mode for along time because the auto refresh command is not issued for a long timewill not occur:

A commonly known refresh timer, which is used during a self-refreshoperation in which a current value is restrained, can be used as thetimer circuit 400. Due to this, a separate timer circuit 400 is notrequired. Moreover, because the refresh timer requires very lowoperation power, power consumption can be significantly reduced. Whensuch a refresh timer is used, the activation interval of the timersignal OSC matches with the activation interval of the refresh signalREFB. Thus, the interval of shifting to the first operation mode is thesame as that in the first and second embodiments.

As in a semiconductor device 10 c shown in FIG. 11, the timer signal OSCand the refresh signal REFB can be combined.

FIG. 12 is a block diagram of a data processing system 500 that includesthe semiconductor device 10 according to an embodiment of the presentinvention.

The data processing system 500 shown in FIG. 12 has a configuration inwhich a data processor 520 as a controller and the semiconductor device(DRAM) 10 according to the present embodiment are mutually connected viaa system bus 510. For example, the data processor 520 can be amicroprocessor (MPU) or a digital signal processor (DSP), but is notlimited thereto. For the sake of simplification, the data processor 520and the DRAM 10 are shown to be connected via the system bus 510 in FIG.12. Alternatively, the data processor 520 and the DRAM 10 can beconnected by a local bus.

In the data processing system 500 shown in FIG. 12, at least the clockterminals 11 a and 11 b (first external terminals) and the data inputand output terminal 14 (a second external terminal) of the semiconductordevice 10 shown in FIG. 1 are connected to the data processor 520 viathe system bus 510.

Furthermore, for the sake of simplification, only one set of the systembus 510 is shown in FIG. 12. Plural sets of system buses can be providedin series or parallel, as required, by connecting through one or moreconnectors. In the data processing system 500 shown in FIG. 12, astorage device 540, an I/O device 550, and a ROM 560 are connected tothe system bus 510; however, these constituent elements are notessential.

The storage device 540 can be a hard disk drive, an optical disk drive,a flash memory and the like. The I/O device 550 can be a display devicesuch as a liquid crystal display, and an input device such as a keyboardand a mouse. Furthermore, the I/O device 550 can be either the inputdevice or the output device. For the sake of simplification, only oneeach of the constituent elements of the data processing system 500 isshown in FIG. 12. Two or more of all the constituent elements or a partthereof can be provided.

It is apparent that the present invention is not limited to the aboveembodiments, but may be modified and changed without departing from thescope and spirit of the invention.

For example, while an SDRAM having a DLL circuit incorporated thereinhas been explained in the above embodiments, the application range ofthe present invention is not limited thereto, and the invention is alsoapplicable to semiconductor devices other than memories. Specifically,the present invention can be applied to semiconductor products ingeneral, such as a CPU (Central Processing Unit), MCU (Micro ControlUnit), DSP (Digital Signal Processor), ASIC (Application SpecificIntegrated Circuit), or ASSP (Application Specific Standard Circuit),having an DLL circuit incorporated therein.

The clock generating circuit according to the present invention is notlimited to a DLL circuit, and the present invention is applicable to anyother type of a clock generating circuit as far as it can generate aphase-adjusted internal clock signal.

In the above embodiments, the phase control unit 120 is shifted betweenthe first operation mode and the second operation mode. However, thephase control unit 120 can include a third operation mode. That is,shifting directly from the first operation mode to the second operationmode (or vice versa) is not essential, and such shifting can beperformed via the third operation mode.

In the above embodiments, the refresh signal REFB, the detection signalJ3 that indicates variations in the power supply voltage VDD, and thetimer signal OSC are used as the trigger signal for shifting to thefirst operation mode. However, in the present invention, the triggersignal is not limited to these signals. For example, an external commandthat causes the DLL circuit to exit the self-refresh operation(generally, regulated by shifting from a low level to a high level of anexternal terminal CKE) can be used as the trigger signal. When two ormore trigger signals are used, they can be combined as desired. Thetrigger signal can be either generated inside the semiconductor deviceor supplied from outside.

Similarly, in the above embodiments, the dither determination or thenon-continuity determination is used for detecting the DLL lock forshifting the phase control unit 120 to the second operation mode.However, other methods can also be used for detecting the DLL lock. Whentwo or more detection methods are used, they can be combined as desired.In the above embodiments, the DLL lock is determined in the ditherdetermination when the up/down signal U/D changes two times. However,some other rule can be used for the dither determination. Similarly,some other rule can be used for the non-continuity determination.

When the present invention is applied to a DLL circuit that includes twophase control units 120 where one of the phase control units 120controls a position of a rising edge of the internal clock signal LCLKand the other phase control unit 120 controls a position of a fallingedge of the internal clock signal LCLK, detection of the DLL lock isperformed for both of the rising edge and the falling edge of theinternal clock signal LCLK. When the DLL lock is detected, respectively,for both the edges, the phase control units 120 can be shifted to thesecond operation mode.

In the above embodiments, the operations of all the circuit blocks thatconstitute the phase control units 120 and 220 to be shifted to thesecond operation mode are stopped. However, stopping the operations ofall the circuit blocks that constitute a phase control unit is notessential, and the operations of some of the circuit blocks can becontinued.

A device to which the present invention is applied can be also appliedto a semiconductor device such as an SOC (System on Chip), MCP (MultiChip Package), and POP (Package on Package). Furthermore, the transistorof the present invention can be an FET (Field Effect Transistor) or abipolar transistor. The transistor can be applied to various types ofFETs such as a MIS (Metal-Insulator Semiconductor) and TFT (Thin FilmTransistor) as well as MOS (Metal Oxide Semiconductor). The type of thetransistor can be other than FETs, and a bipolar transistor can bepartially included.

Furthermore, a P-channel transistor or a PMOS transistor is arepresentative example of a first conductive transistor, and anN-channel transistor and an NMOS transistor is a representative exampleof a second conductive transistor. Further, a semiconductor substrateused in the present invention is not limited to a P-type semiconductorsubstrate, and it can be an N-type semiconductor substrate, asemiconductor substrate with an SOI (Silicon on Insulator) structure, orother types of semiconductor substrates.

Furthermore, a circuit configuration of a dither determining circuit anda continuity determining circuit is not limited to the circuitconfiguration disclosed in the above embodiments.

Different combinations and selections of various disclosed elements canbe made within the scope of the claims of the present invention. Thatis, it should be readily understood that the present invention embracesthe entire disclosure of this specification including the claims, aswell as various changes and modifications that can be achieved by thoseskilled in the art based on the technical concept of the invention.

What is claimed is:
 1. A method for generating an internal clock signalby a clock generating circuit, comprising: generating the internal clocksignal based on an external clock signal; adjusting a phase of theinternal clock signal by using a phase control value to synchronize witha phase of the external clock signal based on a phase difference betweenthe external clock signal and the internal clock signal; and switchingoperation modes including a first operation mode in which a phase of theinternal clock signal is controlled at a predetermined cycle by updatingthe phase control value and a second operation mode in which a phase ofthe internal clock signal is fixed by fixing the phase control value,wherein the switching includes switching from the second operation modeto the first operation mode in response to a trigger signal, and theswitching includes switching from the first operation mode to the secondoperation mode in response to a state where the internal clock signalattains a predetermined phase.
 2. The clock generating circuit asclaimed in claim 1, wherein the trigger signal is activated at the timeof a refresh operation that restores information in a memory cell isperformed.
 3. The clock generating circuit as claimed in claim 2,wherein the switching includes switching from the second operation modeto the first operation mode after the refresh operation is completed. 4.The method for generating an internal clock signal as claimed in claim1, wherein the trigger signal is generated in response to an outputsignal of a power detecting circuit.
 5. The method for generating aninternal clock signal as claimed in claim 1, wherein the power detectingcircuit outputs a first level of the output signal when a power supplyvoltage varies equal to or higher than a reference acceleration, andwherein the power detecting circuit outputs a second level of the outputsignal when the power supply voltage varies smaller than the referenceacceleration, the first and second levels being different from eachother.
 6. The method for generating an internal clock signal as claimedin claim 1, further comprising: outputting an output signal to outsidein synchronization with the internal clock signal by an output buffer,wherein the clock generating circuit includes: a replica circuit thatgenerates a feedback clock signal from the internal clock signal, thefeedback clock signal being supplied to the phase-controlling unit; andthe replica circuit has a substantially same circuit configuration asthe output buffer.
 7. The method for generating an internal clock signalas claimed in claim 1, wherein the trigger signal is output by a logiccircuit which includes a first input node configured to receive theoutput signal of the power detecting circuit and a second input nodeconfigured to receive a refresh signal.
 8. The method for generating aninternal clock signal as claimed in claim 1, wherein the trigger signalis output by a logic circuit which includes a first input nodeconfigured to receive the output signal of the power detecting circuitand a second input node configured to receive an output of a timercircuit.
 9. A method for generating a clock by a clock generatingcircuit comprising: receiving a first clock signal and a first controlsignal and outputting a second clock signal; comparing the second clocksignal with the first clock signal and outputting a comparison signal;and receiving the comparison signal and sending the first control signalto control the outputting the second clock signal, wherein the clockgenerating circuit is controlled by a control circuit outputting asecond control signal, the second control signal being output inresponse to at least a first detection signal that is generated when afirst variation of a power supply voltage has been detected; and thedetection signal is generated by a detecting circuit, the detectingcircuit including: first, second and third resistor circuits eachcoupled between a power supply and a ground; a first comparatorincluding a first input node coupled to the first resistor circuit and asecond input node coupled to the third resistor circuit, and includingan output node; a second comparator including a first input node coupledto the third resistor circuit and the second resistor circuit, andincluding an output node; and an AND gate including a first input nodecoupled to the output node of the first comparator and the second inputnode coupled to the output node of the second comparator, and the ANDgate outputting an output signal of the detecting circuit.
 10. Themethod for generating a clock as claimed in claim 9, wherein the secondcontrol signal is further output in response to a second detectionsignal that is generated when a first time period elapse of deactivationof the clock generating circuit has been detected.
 11. The method forgenerating a clock as claimed in claim 9, wherein the control circuitfurther includes: a logic circuit receiving the first detection signaloutput from the detecting circuit that detects the first variation ofthe power supply voltage of the device and an additional signal, and thelogic circuit outputting the second control signal, wherein theadditional signal is one of a refresh signal that is generated in arefresh operation and a timer signal that is generated when a first timeperiod elapse of deactivation of the clock generating circuit has beendetected.
 12. The method for generating a clock as claimed in claim 9,wherein the detecting circuit detects a variation of the power supplyvoltage of the device, wherein the detecting circuit generating a firstlevel of the first detection signal when it is detected that a variationof the power supply voltage of the device is equal to or higher than thefirst variation, and the detecting circuit further generating a secondlevel of the first detection signal when it is detected that a variationof the power supply voltage of the device is smaller than the firstvariation, the first and second level being different from each other.13. The method for generating a clock as claimed in claim 9, wherein thefirst resistor circuit of the detecting circuit comprises: a firstresistor coupled between the power supply and a first intermediate node;and a second resistor coupled between the first intermediate node andthe ground, wherein the first intermediate node being coupled to thefirst input node of the first comparator, wherein the second resistorcircuit of the detecting circuit comprises: a third resistor coupledbetween the power supply and a second intermediate node; a fourthresistor coupled between the second intermediate node and the ground,the second intermediate node being coupled to the second input node ofthe second comparator; wherein the third resistor circuit of thedetecting circuit comprises: a fifth resistor coupled between the powersupply and a third intermediate node; a sixth resistor coupled betweenthe third intermediate node and the ground, the third intermediate beingcoupled to the second input node of the first comparator and the firstinput node of the second comparator; and wherein the first and fourthresistors are the substantially same in a resistance value as eachother, wherein the second and third resistors are the substantially samein a resistance value as each other, and wherein each of the fifth andsixth resistors is smaller in a resistance value than each of the first,second, third, and fourth resistors.
 14. The method for generating aclock as claimed in claim 9, wherein the clock generating circuit iscontrolled so as to change from deactivation to activation in responseto the first detection signal.
 15. A method for generating a clockcomprising: receiving a first clock signal and outputting a second clocksignal; comparing the second clock signal with the first clock signal tochange, when activated, a delay of the second clock signal; supplying afirst voltage to a first voltage line; supplying a second voltage to asecond voltage line; and detecting a variation in voltage according toan acceleration of a variation of a power supply voltage by a voltagedetecting circuit; and the voltage detecting circuit activating thephase control circuit in response to the detecting thereof.
 16. Themethod for generating a clock according to claim 15, further comprising:counting a first cycle by a timer circuit, wherein the timer circuitactivating the phase control circuit in response to the counting of thefirst cycle.
 17. The method for generating a clock according to claim15, wherein when the power supply voltage varies at an accelerationequal to or greater than a predetermined acceleration, a detectionsignal outputted by the voltage detecting circuit is activated to a lowlevel.
 18. The method for generating a clock according to claim 15,wherein the voltage detecting circuit includes a plurality of resistorsincluding a first and a second resistor substantially greater than theresistance values of a third resistor.